The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of I X 10(15) cm(-2) the collected charge is reduced to 77% at bias voltages below 900V. This result is compared with previous results from charge collection measurements. (c) 2007 Published by Elsevier B.V.
Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors
MESSINEO, ALBERTO MARIA
2007-01-01
Abstract
The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of I X 10(15) cm(-2) the collected charge is reduced to 77% at bias voltages below 900V. This result is compared with previous results from charge collection measurements. (c) 2007 Published by Elsevier B.V.File in questo prodotto:
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