High resolution electron and ion beam lithographies, fundamental tools for nanofabrication and nanotechnologies, require fast and high precision (high bit number) pattern generators. In the present work a solution for increasing the bit number, and preserving the speed of the system, is presented. A prototype with effective 18 bit resolution and with a write speed as fast as 10 MHz has been successfully tested: details of the adopted hardware solution are presented and described. This solution is very general and can be used in all those applications that require the generation of control voltages with an high bit number (high precision) at high speed, such as, for example, the scanning probe microscopy and nanomanipulation. Software solutions for increasing the data transfer efficiency are also presented; the aim of the adopted solutions is to preserve the flexibility and adaptability of the pattern generator to different writing strategies. (C) 2008 American Institute of Physics.

Fast, high bit number pattern generator for electron and ion beam lithographies

PENNELLI, GIOVANNI
2008-01-01

Abstract

High resolution electron and ion beam lithographies, fundamental tools for nanofabrication and nanotechnologies, require fast and high precision (high bit number) pattern generators. In the present work a solution for increasing the bit number, and preserving the speed of the system, is presented. A prototype with effective 18 bit resolution and with a write speed as fast as 10 MHz has been successfully tested: details of the adopted hardware solution are presented and described. This solution is very general and can be used in all those applications that require the generation of control voltages with an high bit number (high precision) at high speed, such as, for example, the scanning probe microscopy and nanomanipulation. Software solutions for increasing the data transfer efficiency are also presented; the aim of the adopted solutions is to preserve the flexibility and adaptability of the pattern generator to different writing strategies. (C) 2008 American Institute of Physics.
2008
Pennelli, Giovanni
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/122056
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 3
social impact