We measured the non-radiative intersubband relaxation time in n-type modulation-doped Ge/SiGe multi-quantum wells of different thickness by means of degenerate pump-probe experiments. The photon energy was tuned to be resonant with the lowest conduction band intersubband transition energy (14-29 meV), as measured by terahertz absorption spectroscopy and in agreement with band structure calculations. Temperature-independent lifetimes in excess of 30 ps were observed.

Long intersubband relaxation times in n-type germanium quantum wells

VIRGILIO, MICHELE;GROSSO, GIUSEPPE;
2011-01-01

Abstract

We measured the non-radiative intersubband relaxation time in n-type modulation-doped Ge/SiGe multi-quantum wells of different thickness by means of degenerate pump-probe experiments. The photon energy was tuned to be resonant with the lowest conduction band intersubband transition energy (14-29 meV), as measured by terahertz absorption spectroscopy and in agreement with band structure calculations. Temperature-independent lifetimes in excess of 30 ps were observed.
2011
Ortolani, M; Stehr, D; Wagner, M; Helm, M; Pizzi, G; Virgilio, Michele; Grosso, Giuseppe; Capellini, G; De Seta, M.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/150737
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