The performance of silicon micro-strip detectors after heavy irradiation have been investigated using a muon beam. Large-area sensors have been irradiated with neutrons and protons, read-out with fast shaping time electronics, and operated at low temperature. The paper presents a study of the charge collection efficiency, signal-to-noise ratio and hit reconstruction: efficiency of these silicon devices.

Test results on heavily irradiated silicon detectors

MESSINEO, ALBERTO MARIA;TONELLI, GUIDO EMILIO;
1999-01-01

Abstract

The performance of silicon micro-strip detectors after heavy irradiation have been investigated using a muon beam. Large-area sensors have been irradiated with neutrons and protons, read-out with fast shaping time electronics, and operated at low temperature. The paper presents a study of the charge collection efficiency, signal-to-noise ratio and hit reconstruction: efficiency of these silicon devices.
1999
Borrello, L; Bozzi, C; Dell'Orso, R; Dutta, S; Messineo, ALBERTO MARIA; Rizzo, F; Starodumov, A; Tonelli, GUIDO EMILIO; Verdini, Pg
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/166591
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