We are investigating the use of a double side mu-strip silicon crystal for X-ray detection. The detector is 300 mum thick and the read-out pitch is 100 mum for both sides. It operates in capacitive charge division mode by means of floating strips between read-out strips. The detector has been irradiated by Am-241 and Cd-109 sources. Different zones within the 100 mum read-out, pitch have been individually exposed. Thus, the following characteristics have been studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution, (d) the spatial resolution. The absolute efficiency of the detector has also been measured at three energy values.

CHARACTERIZATION OF THE RESPONSE OF A DOUBLE SIDE M-STRIP SILICON DETECTOR TO X-RAYS IN THE DIAGNOSTIC ENERGY-RANGE

BENCIVELLI, VALTER;DEL GUERRA, ALBERTO;FANTACCI, MARIA EVELINA;ROSSO, VALERIA;
1993-01-01

Abstract

We are investigating the use of a double side mu-strip silicon crystal for X-ray detection. The detector is 300 mum thick and the read-out pitch is 100 mum for both sides. It operates in capacitive charge division mode by means of floating strips between read-out strips. The detector has been irradiated by Am-241 and Cd-109 sources. Different zones within the 100 mum read-out, pitch have been individually exposed. Thus, the following characteristics have been studied as a function of the impact point of the photon: (a) the charge collection mechanism; (b) the relative detection efficiency; (c) the energy resolution, (d) the spatial resolution. The absolute efficiency of the detector has also been measured at three energy values.
1993
Bandettini, A; Bencivelli, Valter; Bertolucci, E; Bottigli, U; Conti, M; DEL GUERRA, Alberto; Fantacci, MARIA EVELINA; Randaccio, P; Rosso, Valeria; Russo, P; Stefanini, A.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/174533
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