We have fabricated MOS transistors with a commercial double-sided silicon detector (DSSD) process, on the same wafer as the detector. These devices have been simulated and measured in the lab both in the DC characteristics and in the noise figures.
Characterization of MOS transistors integrated on high-resistivity silicon with a DSSD process
BATIGNANI, GIOVANNI;FORTI, FRANCESCO;GIORGI, MARCELLO;
1997-01-01
Abstract
We have fabricated MOS transistors with a commercial double-sided silicon detector (DSSD) process, on the same wafer as the detector. These devices have been simulated and measured in the lab both in the DC characteristics and in the noise figures.File in questo prodotto:
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