In this work, integration on the same chip of porous silicon gas sensors along with their driving/readout electronic circuits by using an industrial microelectronic process is demonstrated. To ensure maximum compatibility, the porous silicon formation is performed after the integrated circuit fabrication flow is completed. The chip contains three CMOS operational amplifiers, a band-gap voltage reference, an integrated temperature sensor and several porous silicon-based NO 2 sensors. The simultaneous functionality of the electronics and the sensor is demonstrated by using various circuit blocks to implement a simple driving/readout electronic interface for the sensor
CMOS-compatible fabrication of porous silicon gas sensors and their readout electronics on the same chip
BARILLARO, GIUSEPPE;BRUSCHI, PAOLO;PIERI, FRANCESCO;STRAMBINI, LUCANOS MARSILIO
2007-01-01
Abstract
In this work, integration on the same chip of porous silicon gas sensors along with their driving/readout electronic circuits by using an industrial microelectronic process is demonstrated. To ensure maximum compatibility, the porous silicon formation is performed after the integrated circuit fabrication flow is completed. The chip contains three CMOS operational amplifiers, a band-gap voltage reference, an integrated temperature sensor and several porous silicon-based NO 2 sensors. The simultaneous functionality of the electronics and the sensor is demonstrated by using various circuit blocks to implement a simple driving/readout electronic interface for the sensorI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.