In this work, we propose a fabrication process for a single-electron transistor on silicon. The process is developed on silicon on insulator wafer and it is based on electron beam lithography and KOH anisotropic etching. A structure composed by a small silicon isle connected to the leads by channels with triangular cross-section is obtained. Channel dimensions have been reduced by oxidation and the substrate has been used as backgate. Preliminary I-V characteristics show phenomena of charge/discharge at room temperature. (c) 2006 Elsevier B.V. All rights reserved.
|Autori:||Pennelli G; Piotto M; Barillaro G|
|Titolo:||Silicon single-electron transistor fabricated by anisotropic etch and oxidation|
|Anno del prodotto:||2006|
|Digital Object Identifier (DOI):||10.1016/j.mee.2006.01.144|
|Appare nelle tipologie:||1.1 Articolo in rivista|