Silicon wires with nanometric dimensions have been fabricated on SIMOX wafers by means of e-beam lithography and wet chemical etchings, exploiting the underetching properties of the KOH etchant. The cross section of the resistors has a trapezoidal shape; a minimum top width of 40 nm has been obtained. The whole process required only two writing steps. I-V characteristics were measured at room temperature as a function of the backgate voltage. (c) 2005 Elsevier B.V. All rights reserved.
|Autori:||S. CIUCCI; F. DANGELO; A. DILIGENTI; PELLEGRINI B; G. PENNELLI; M. PIOTTO|
|Titolo:||Silicon nanowires fabricated by means of an underetching technique|
|Anno del prodotto:||2005|
|Digital Object Identifier (DOI):||10.1016/j.mee.2004.12.044|
|Appare nelle tipologie:||1.1 Articolo in rivista|