Intervalley splitting in an n-channel Si(001) inversion layer is evaluated by means of a triangular quantum well which simulates the effect of a static electric field. All the microscopic interactions are included in the realistic tight-binding bulk Hamiltonian of the crystal to which the electric field is applied. Eigenvalues and projected densities of states in the triangular well are evaluated from the knowledge of the Green's function obtained by the renormalization procedure. We find that the valley splitting increases nonlinearly as the external field increases.
Valley splitting in triangular Si(001) quantum wells
GROSSO, GIUSEPPE;
1996-01-01
Abstract
Intervalley splitting in an n-channel Si(001) inversion layer is evaluated by means of a triangular quantum well which simulates the effect of a static electric field. All the microscopic interactions are included in the realistic tight-binding bulk Hamiltonian of the crystal to which the electric field is applied. Eigenvalues and projected densities of states in the triangular well are evaluated from the knowledge of the Green's function obtained by the renormalization procedure. We find that the valley splitting increases nonlinearly as the external field increases.File in questo prodotto:
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