We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit similar to 1 GHz -3 dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672438]
Lasing in planar semiconductor diodes
TREDICUCCI, ALESSANDRO;
2011-01-01
Abstract
We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit similar to 1 GHz -3 dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672438]File in questo prodotto:
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