In this work a numerical approach has been used to investigate some properties of semi-insulating GaAs detectors. In particular, the electric field and the carriers mean free path distributions have been obtained, by solving transport and Poisson equations. The knowledge of these quantities allows us to determine the charge-collection efficiency and other detector characteristics. A comparison with the experimental results of X-ray irradiated detectors of different thicknesses has been carried out. RI Cola, Adriano/G-2379-2010

A study of the electrical and charge-collection properties of semi-insulating GaAs detectors

Ciocci MA;FANTACCI, MARIA EVELINA
1996-01-01

Abstract

In this work a numerical approach has been used to investigate some properties of semi-insulating GaAs detectors. In particular, the electric field and the carriers mean free path distributions have been obtained, by solving transport and Poisson equations. The knowledge of these quantities allows us to determine the charge-collection efficiency and other detector characteristics. A comparison with the experimental results of X-ray irradiated detectors of different thicknesses has been carried out. RI Cola, Adriano/G-2379-2010
1996
Cola, A; Quaranta, F; Ciocci, Ma; Fantacci, MARIA EVELINA
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/50651
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