Langmuir-Schaefer (LS) technique is applied to deposit uniform films of poly(methacrylate) derivative with fluorocarbon groups in the side chains. The films of this compound cannot be deposited with the ordinary Langmuir-Blodgett (LB) technique while the Langmuir-Schaefer technique version used in the present study allows to achieve fast deposition at low surface pressure. The films are sensitive to an electron beam. Positive patterns can be produced in the deposited multilayers in a definite range of exposure doses. The sensitivity and the contrast are equal to 42.4 muC/cm(2) and 1.2, respectively. Strong irradiation results in film cross-linking and negative pattern formation. High quality of deposition of ultrathin layers and their sensitivity to an electron beam allow the use of the studied compound for the development of nanostructured materials.
Electron beam sensitive LB films of fluorocarbon polymer
CASTELVETRO, VALTER;
2002-01-01
Abstract
Langmuir-Schaefer (LS) technique is applied to deposit uniform films of poly(methacrylate) derivative with fluorocarbon groups in the side chains. The films of this compound cannot be deposited with the ordinary Langmuir-Blodgett (LB) technique while the Langmuir-Schaefer technique version used in the present study allows to achieve fast deposition at low surface pressure. The films are sensitive to an electron beam. Positive patterns can be produced in the deposited multilayers in a definite range of exposure doses. The sensitivity and the contrast are equal to 42.4 muC/cm(2) and 1.2, respectively. Strong irradiation results in film cross-linking and negative pattern formation. High quality of deposition of ultrathin layers and their sensitivity to an electron beam allow the use of the studied compound for the development of nanostructured materials.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
