We discuss a few aspects of nanoelectronic device simulation, focusing on numerical approaches for the proper treatment of the boundary conditions at the exposed surface of gallium arsenide and on the techniques for the solution of the Schroedinger equation in open structures threaded by a strong magnetic field.
Computational methods for nanoelectronics
MACUCCI, MASSIMO
2005-01-01
Abstract
We discuss a few aspects of nanoelectronic device simulation, focusing on numerical approaches for the proper treatment of the boundary conditions at the exposed surface of gallium arsenide and on the techniques for the solution of the Schroedinger equation in open structures threaded by a strong magnetic field.File in questo prodotto:
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