In this paper, we extend our derivation of an analytical model for nanoscale MOSFETs, focusing on the effects of Fermi-Dirac statistics on vertical electrostatics and on carrier transport. We derive a relation between mobility and mean-free path valid under degenerate statistics, and investigate the cases of rectangular and triangular quantum confinement under Fermi-Dirac statistics in the transition from DD to B transport. We derive a simple, physics-based and continuous analytical model that describes double-gate MOSFETs, fully depleted silicon-on-insulator MOSFETs, and bulk MOSFETs in the electric quantum limit in the whole range of transport regimes comprised between DD (device length much larger than mean-free path) and B (device length much mailer than mean-free path).

Physics-based compact model of nanoscale MOSFETs - Part II: Effects of degeneracy on transport

IANNACCONE, GIUSEPPE
2005-01-01

Abstract

In this paper, we extend our derivation of an analytical model for nanoscale MOSFETs, focusing on the effects of Fermi-Dirac statistics on vertical electrostatics and on carrier transport. We derive a relation between mobility and mean-free path valid under degenerate statistics, and investigate the cases of rectangular and triangular quantum confinement under Fermi-Dirac statistics in the transition from DD to B transport. We derive a simple, physics-based and continuous analytical model that describes double-gate MOSFETs, fully depleted silicon-on-insulator MOSFETs, and bulk MOSFETs in the electric quantum limit in the whole range of transport regimes comprised between DD (device length much larger than mean-free path) and B (device length much mailer than mean-free path).
2005
G., Mugnaini; Iannaccone, Giuseppe
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/98524
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