PERUCCHINI, MARTA Statistiche
PERUCCHINI, MARTA
DIPARTIMENTO DI INGEGNERIA DELL'INFORMAZIONE
Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite
2023-01-01 Marian, D.; Marin, E. G.; Perucchini, M.; Iannaccone, G.; Fiori, G.
Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective
2022-01-01 Perucchini, M.; Marian, D.; Marin, E. G.; Cusati, T.; Iannaccone, G.; Fiori, G.
A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design
2021-01-01 Aamir Ahsan, Sheikh; Kumar Singh, Shivendra; Ashraf Mir, Mehak; Perucchini, Marta; K Polyushkin, Dmitry; Mueller, Thomas; Fiori, Gianluca; G Marín, Enrique
Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source
2020-01-01 Marin, E. G.; Marian, D.; Perucchini, M.; Fiori, G.; Iannaccone, G.
Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate
2018-01-01 Perucchini, Marta; Marin, Enrique G.; Marian, Damiano; Iannaccone, Giuseppe; Fiori, Gianluca
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Multi-scale simulations of two dimensional material based devices: the NanoTCAD ViDES suite | 1-gen-2023 | Marian, D.; Marin, E. G.; Perucchini, M.; Iannaccone, G.; Fiori, G. | |
| Electronic Transport in 2D-Based Printed FETs from a Multiscale Perspective | 1-gen-2022 | Perucchini, M.; Marian, D.; Marin, E. G.; Cusati, T.; Iannaccone, G.; Fiori, G. | |
| A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design | 1-gen-2021 | Aamir Ahsan, Sheikh; Kumar Singh, Shivendra; Ashraf Mir, Mehak; Perucchini, Marta; K Polyushkin, Dmitry; Mueller, Thomas; Fiori, Gianluca; G Marín, Enrique | |
| Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source | 1-gen-2020 | Marin, E. G.; Marian, D.; Perucchini, M.; Fiori, G.; Iannaccone, G. | |
| Physical insights into the operation of a 1-nm gate length transistor based on MoS2 with metallic carbon nanotube gate | 1-gen-2018 | Perucchini, Marta; Marin, Enrique G.; Marian, Damiano; Iannaccone, Giuseppe; Fiori, Gianluca |