The attention of several groups in the particle physics community has been drawn to monolithic active pixel sensors (MAPS) in CMOS technology as promising candidates for charge particle tracking at the future high luminosity colliders. Their working principle, based on the diffusion of minority carriers in a lightly doped, thin epitaxial layer, might be exploited in the fabrication of highly granular, light detectors possibly satisfying the resolution constraints set by next generation experiments at the International Linear Collider and at the Super B-Factory [1].

Monolithic active pixel sensors in a 130 nm triple well CMOS technology

BETTARINI, STEFANO;CALDERINI, GIOVANNI;FORTI, FRANCESCO;GIORGI, MARCELLO;RIZZO, GIULIANA
2007

Abstract

The attention of several groups in the particle physics community has been drawn to monolithic active pixel sensors (MAPS) in CMOS technology as promising candidates for charge particle tracking at the future high luminosity colliders. Their working principle, based on the diffusion of minority carriers in a lightly doped, thin epitaxial layer, might be exploited in the fabrication of highly granular, light detectors possibly satisfying the resolution constraints set by next generation experiments at the International Linear Collider and at the Super B-Factory [1].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/116812
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