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EnglishA compact converter from capacitance to pulse width, suitable for interfacing integrated capacitive sensors is described. The circuit has been designed and fabricated using 0.32 μm/ 3.3 V CMOS devices from the BCD6s process of STMicroelectroncs and occupies an area of 1025 × 515 μm2. Measurements performed on the test chip showed an excellent linearity, a temperature drift of 300 ppm/”C, and power consumption as low as 84 μW for continuous operation.
| Titolo: | A low-power capacitance to pulse width converter for MEMS interfacing |
| Autori interni: | |
| Anno del prodotto: | 2008 |
| Abstract: | A compact converter from capacitance to pulse width, suitable for interfacing integrated capacitive sensors is described. The circuit has been designed and fabricated using 0.32 μm/ 3.3 V CMOS devices from the BCD6s process of STMicroelectroncs and occupies an area of 1025 × 515 μm2. Measurements performed on the test chip showed an excellent linearity, a temperature drift of 300 ppm/”C, and power consumption as low as 84 μW for continuous operation. |
| Handle: | http://hdl.handle.net/11568/118850 |
| ISBN: | 9781424423613 |
| Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
File in questo prodotto:
http://hdl.handle.net/11568/118850
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