A compact converter from capacitance to pulse width, suitable for interfacing integrated capacitive sensors is described. The circuit has been designed and fabricated using 0.32 μm/ 3.3 V CMOS devices from the BCD6s process of STMicroelectroncs and occupies an area of 1025 × 515 μm2. Measurements performed on the test chip showed an excellent linearity, a temperature drift of 300 ppm/”C, and power consumption as low as 84 μW for continuous operation.

A low-power capacitance to pulse width converter for MEMS interfacing

BRUSCHI, PAOLO;
2008-01-01

Abstract

A compact converter from capacitance to pulse width, suitable for interfacing integrated capacitive sensors is described. The circuit has been designed and fabricated using 0.32 μm/ 3.3 V CMOS devices from the BCD6s process of STMicroelectroncs and occupies an area of 1025 × 515 μm2. Measurements performed on the test chip showed an excellent linearity, a temperature drift of 300 ppm/”C, and power consumption as low as 84 μW for continuous operation.
9781424423613
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/118850
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