A compact converter from capacitance to pulse width, suitable for interfacing integrated capacitive sensors is described. The circuit has been designed and fabricated using 0.32 μm/ 3.3 V CMOS devices from the BCD6s process of STMicroelectroncs and occupies an area of 1025 × 515 μm2. Measurements performed on the test chip showed an excellent linearity, a temperature drift of 300 ppm/”C, and power consumption as low as 84 μW for continuous operation.
A low-power capacitance to pulse width converter for MEMS interfacing
BRUSCHI, PAOLO;
2008-01-01
Abstract
A compact converter from capacitance to pulse width, suitable for interfacing integrated capacitive sensors is described. The circuit has been designed and fabricated using 0.32 μm/ 3.3 V CMOS devices from the BCD6s process of STMicroelectroncs and occupies an area of 1025 × 515 μm2. Measurements performed on the test chip showed an excellent linearity, a temperature drift of 300 ppm/”C, and power consumption as low as 84 μW for continuous operation.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
