Physical Modelling of the SET/RESET characteristics and analog properties of TiOx/HfO2-x/TiOx-based RRAM devices

Understanding the origins of switching effect is of great importance, since it can enlighten our perspectives and offers guidance for novel device design. In contrast with the common electronic devices which rely their operation only at electron transport properties, resistive switching effect exhibits a strong dependence from the local distribution of ions. Here, we present a quantitative analysis, both at DC and AC domains, which can account for the analog properties of our trilayer-based devices. Our approach can capture the gradual SET/RESET responses, which stem from the balance between drift and diffusion effect, and highlight the crucial role of temperature, electric field and oxygen vacancy density on the switching pattern.