Tensile strained-silicon waveguides were produced by LPCVD (780°C) by depositing a 150 nm-thick Si3N4 overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ(2) in the bulk silicon. © 2011 IEEE.
Second-order susceptibility χ(2) in Si waveguides
Bianco F.;Pitanti A.;
2011-01-01
Abstract
Tensile strained-silicon waveguides were produced by LPCVD (780°C) by depositing a 150 nm-thick Si3N4 overlayer. Nonlinear nanosecond and femtosecond transmission experiments indicated the presence of a significant χ(2) in the bulk silicon. © 2011 IEEE.File in questo prodotto:
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