The fabrication and characterization of SiC Schottky diodes for the detection of alpha particles at room temperature are described. A 5 × 5 matrix of diodes has been fabricated in order to verify the dependence of the device response on randomly distributed wafer defects. A dedicated exposure apparatus has been fabricated to test the detectors. Some preliminary alpha energy spectra obtained with the lowest reverse current diodes are shown.

Silicon carbide Schottky diodes for alpha particle detection

PIOTTO, MASSIMO;BRUSCHI, PAOLO;DILIGENTI, ALESSANDRO;CIOLINI, RICCARDO;CURZIO, GIORGIO;
2011-01-01

Abstract

The fabrication and characterization of SiC Schottky diodes for the detection of alpha particles at room temperature are described. A 5 × 5 matrix of diodes has been fabricated in order to verify the dependence of the device response on randomly distributed wafer defects. A dedicated exposure apparatus has been fabricated to test the detectors. Some preliminary alpha energy spectra obtained with the lowest reverse current diodes are shown.
2011
9789400713239
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/150479
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? ND
social impact