The fabrication and characterization of SiC Schottky diodes for the detection of alpha particles at room temperature are described. A 5 × 5 matrix of diodes has been fabricated in order to verify the dependence of the device response on randomly distributed wafer defects. A dedicated exposure apparatus has been fabricated to test the detectors. Some preliminary alpha energy spectra obtained with the lowest reverse current diodes are shown.
Silicon carbide Schottky diodes for alpha particle detection
PIOTTO, MASSIMO;BRUSCHI, PAOLO;DILIGENTI, ALESSANDRO;CIOLINI, RICCARDO;CURZIO, GIORGIO;
2011-01-01
Abstract
The fabrication and characterization of SiC Schottky diodes for the detection of alpha particles at room temperature are described. A 5 × 5 matrix of diodes has been fabricated in order to verify the dependence of the device response on randomly distributed wafer defects. A dedicated exposure apparatus has been fabricated to test the detectors. Some preliminary alpha energy spectra obtained with the lowest reverse current diodes are shown.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
