A two masks process to fabricate suspended silicon wires with dimensions in the submicrometric range is proposed. The silicon wires have a trapezoidal cross section and two pads for the electrical characterization. The starting material was a SOI wafer <100> oriented; the structures have been obtained by means of standard photolithography, silicon anisotropic etching and thermal oxidation. The silicon etching was performed in a 35% KOH solution at 47 °C while the structure dimensions were further reduced by means of steam oxidation at 1050°C. Silicon wires with a minimum dimension of 52 nm were obtained.
Free Standing Submicrometric Silicon Wires Fabricated by Means of Micromachining
BARILLARO, GIUSEPPE;BRUSCHI, PAOLO;PIOTTO, MASSIMO
2001-01-01
Abstract
A two masks process to fabricate suspended silicon wires with dimensions in the submicrometric range is proposed. The silicon wires have a trapezoidal cross section and two pads for the electrical characterization. The starting material was a SOI wafer <100> oriented; the structures have been obtained by means of standard photolithography, silicon anisotropic etching and thermal oxidation. The silicon etching was performed in a 35% KOH solution at 47 °C while the structure dimensions were further reduced by means of steam oxidation at 1050°C. Silicon wires with a minimum dimension of 52 nm were obtained.File in questo prodotto:
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