We present the results of the experimental investigation of the detection and mixing properties of Schottky barrier diodes in the visible and near infrared regions. We used diodes with different semiconductor substrates, GaAs, InP and InSb, and different contact geometries. We used the diodes in the regions 458 – 633 nm and 1.3–1.5 µm. The video signals from the different devices were measured together with the beat notes from different modes of the visible lasers and high order harmonics of a microwave radiation. In the visible the GaAs-diode proved to be a very effective detector but has a very low frequency conversion efficiency and it generated no beat signal below 510 nm. On the contrary, InP and InSb-SBD operate very effectively as mixers, even with relatively low detection efficiencies, up to the blue. In the region 1.3 –1.5 µm the GaAs diode does not work while InP and InSb continue to be effective.
|Titolo:||Detection and mixing of visible and infrared radiation by InP and InSb Schottky barrier diode|
|Autori interni:||BEVERINI, NICOLO'|
|Anno del prodotto:||2000|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|