The design and testing of integrated magnetic sensors based on the Hall principle are described. The sensors have been fabricated using a standard 0.8 μm CMOS process. Sensitivity improvements and offset reduction have been achieved by a proper design of the active layers and sensor geometry. The resulting devices, included in four different 1.5 mm × 1.5 mm chips, have been tested in a spatially uniform magnetic field in order to compare the sensitivity, offset and linearity of the various structures.
Integrated Magnetic Field Sensors Fabricated with a Standard CMOS Process
BRUSCHI, PAOLO;PIOTTO, MASSIMO;
2002-01-01
Abstract
The design and testing of integrated magnetic sensors based on the Hall principle are described. The sensors have been fabricated using a standard 0.8 μm CMOS process. Sensitivity improvements and offset reduction have been achieved by a proper design of the active layers and sensor geometry. The resulting devices, included in four different 1.5 mm × 1.5 mm chips, have been tested in a spatially uniform magnetic field in order to compare the sensitivity, offset and linearity of the various structures.File in questo prodotto:
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