A fabrication technology has been developed at ITC-irst (Trento, Italy) for the realisation of silicon microstrip detectors with integrated front-end electronics, to be used in high-energy physics and space experiments as well as in medical/industrial imaging applications. The main technological issues are addressed, and experimental results from the electrical characterisation of the first prototype batch are reported, showing that good quality transistors are obtained within the proposed technology while preserving the basic detector parameters.

Fabrication of microstrip detectors and integrated electronics on high resistivity silicon

BATIGNANI, GIOVANNI;BETTARINI, STEFANO;FORTI, FRANCESCO;GIORGI, MARCELLO;
2002

Abstract

A fabrication technology has been developed at ITC-irst (Trento, Italy) for the realisation of silicon microstrip detectors with integrated front-end electronics, to be used in high-energy physics and space experiments as well as in medical/industrial imaging applications. The main technological issues are addressed, and experimental results from the electrical characterisation of the first prototype batch are reported, showing that good quality transistors are obtained within the proposed technology while preserving the basic detector parameters.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/75659
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