A new process for gated silicon field emitter arrays fabrication

A new process for, gated silicon field emitter arrays fabrication is presented. The fabrication process is based on the photoelectrochemical silicon etching in HF electrolyte solution, a well known technique for macropore array formation. For the first time, we have successfully used this technique to produce very regular silicon microtips array with high aspect ratio (tip height/tip width ratio). The process is able to fabricate field emitter array with self-aligned chromium metal gate using only one mask.