We report on the design and TCAD simulations of planar active-edge pixel sensors within the INFN PixFEL project. These devices are intended as one of the building blocks for the assembly of a multilayer, four-side buttable tile for X-ray imaging applications in future Free Electron Laser facilities. The requirements in terms of very wide dynamic range and tolerance to extremely high ionizing radiation doses call for high operation voltages. A comprehensive TCAD simulation study is presented, aimed at the best trade-offs between the minimization of the edge region size and the sensor breakdown voltage.
Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications
BATIGNANI, GIOVANNI;BETTARINI, STEFANO;CASAROSA, GIULIA;FORTI, FRANCESCO;MORSANI, FABIO;PALADINO, ANTONIO;PAOLONI, EUGENIO;RIZZO, GIULIANA;
2014-01-01
Abstract
We report on the design and TCAD simulations of planar active-edge pixel sensors within the INFN PixFEL project. These devices are intended as one of the building blocks for the assembly of a multilayer, four-side buttable tile for X-ray imaging applications in future Free Electron Laser facilities. The requirements in terms of very wide dynamic range and tolerance to extremely high ionizing radiation doses call for high operation voltages. A comprehensive TCAD simulation study is presented, aimed at the best trade-offs between the minimization of the edge region size and the sensor breakdown voltage.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
