A hierarchical approach to computer-aided simulation of nanoelectronic devices: the case of silicon nanowire transistors

An application of the hierarchical multi-scale approach to computer-aided simulation of nanoelectronic devices is described and its potentialities are shown. In particular, a transport analysis of a silicon-nanowire field-effect-transistor is performed extracting from an atomistic study of a simplified structure a set of parameters that are successively employed in a less detailed envelope function description of the complete device, where the electrostatic and transport equations are self-consistently solved.