In this work a high-aspect-ratio all-silicon in-plane optical accelerometer for low-frequency applications (below 150 Hz) with high-sensitivity (about 10 μm/G), good resolution (about 100 μG), and reduced in-plane dimensions (about tenfold compared to SOI technology) is designed and simulated using Finite Element Method (FEM), and fabricated by silicon electrochemical micromachining (ECM) technology.

HIGH-ASPECT-RATIO IN-PLANE OPTICAL ACCELEROMETER BY SILICON ELECTROCHEMICAL MICROMACHINING TECHNOLOGY

POLITO, GIOVANNI;ROBBIANO, VALENTINA;BARILLARO, GIUSEPPE
2016-01-01

Abstract

In this work a high-aspect-ratio all-silicon in-plane optical accelerometer for low-frequency applications (below 150 Hz) with high-sensitivity (about 10 μm/G), good resolution (about 100 μG), and reduced in-plane dimensions (about tenfold compared to SOI technology) is designed and simulated using Finite Element Method (FEM), and fabricated by silicon electrochemical micromachining (ECM) technology.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/842392
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