A method is described to approximately determine the potential in the channel of a graphene device as a function of the voltages applied to the gates, once the profile at a reference bias point is known. This technique, which avoids the self-consistent solution of the electrostatic and transport equations, is adopted to perform a simplified but fast simulation of some interesting graphene structures.
Simplified method for the determination of the potential landscape in the transport simulation of graphene devices
MARCONCINI, PAOLO
2014-01-01
Abstract
A method is described to approximately determine the potential in the channel of a graphene device as a function of the voltages applied to the gates, once the profile at a reference bias point is known. This technique, which avoids the self-consistent solution of the electrostatic and transport equations, is adopted to perform a simplified but fast simulation of some interesting graphene structures.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
