Over decades, MOSFET gate length scaling has been the main source of progress in semiconductor electronics. Today, however, the motivation of the industry to continue gate length scaling is declining. On the other hand, researchers still spend considerable efforts on reducing the gate length and on developing ultimately scaled MOSFETs. To this end, both new device architectures and alternative channel materials are explored. In the present paper, the future of CMOS scaling in the light of emerging 2D channel materials is discussed.
The prospects of two-dimensional materials for ultimately scaled CMOS
Fiori, G.;
2017-01-01
Abstract
Over decades, MOSFET gate length scaling has been the main source of progress in semiconductor electronics. Today, however, the motivation of the industry to continue gate length scaling is declining. On the other hand, researchers still spend considerable efforts on reducing the gate length and on developing ultimately scaled MOSFETs. To this end, both new device architectures and alternative channel materials are explored. In the present paper, the future of CMOS scaling in the light of emerging 2D channel materials is discussed.File in questo prodotto:
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