This disclosure relates to semi-conductor electronic device.Semi-conductor electronic device includes: semiconductor body;Body area in the semiconductor body;Source terminal in body area;The drain terminal opposite with source region space;And extend the trench-gate for going deep into semiconductor body across body area and source region.Trench-gate includes the dielectric area for burying porous silica in the semiconductor body, and extends in the Gate Electrode Conductive region between the dielectric area of porous silica and the first side.

Semi-conductor electronic device

Giuseppe BARILLARO
2018-01-01

Abstract

This disclosure relates to semi-conductor electronic device.Semi-conductor electronic device includes: semiconductor body;Body area in the semiconductor body;Source terminal in body area;The drain terminal opposite with source region space;And extend the trench-gate for going deep into semiconductor body across body area and source region.Trench-gate includes the dielectric area for burying porous silica in the semiconductor body, and extends in the Gate Electrode Conductive region between the dielectric area of porous silica and the first side.
2018
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/1031775
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