This disclosure relates to a kind of acoustical device, has micromechanics acoustic transducer elements (15);Acoustic attenuation region (40);And acoustical match region (32), it is disposed between acoustic transducer elements (15) and acoustics attenuation region (40).Acoustic transducer elements (15) are formed in the first substrate (25), and first substrate accommodates the chamber (19) for delimiting film (16).The second substrate (30) integrated electronic circuit of semi-conducting material is disposed between acoustic transducer elements (15) and acoustics attenuation region (40).Acoustical match region (32) is with the first interface (32A) with the second substrate and with the second contact surface (32B) with acoustic attenuation region (40).Acoustical match region (32) has the impedance with the impedance matching in the first interface (32A) neighbouring the second substrate (30), and the impedance with the impedance matching in the neighbouring acoustic attenuation region (40) of second contact surface (32B).
Acoustical Device
Giuseppe BARILLARO
2016-01-01
Abstract
This disclosure relates to a kind of acoustical device, has micromechanics acoustic transducer elements (15);Acoustic attenuation region (40);And acoustical match region (32), it is disposed between acoustic transducer elements (15) and acoustics attenuation region (40).Acoustic transducer elements (15) are formed in the first substrate (25), and first substrate accommodates the chamber (19) for delimiting film (16).The second substrate (30) integrated electronic circuit of semi-conducting material is disposed between acoustic transducer elements (15) and acoustics attenuation region (40).Acoustical match region (32) is with the first interface (32A) with the second substrate and with the second contact surface (32B) with acoustic attenuation region (40).Acoustical match region (32) has the impedance with the impedance matching in the first interface (32A) neighbouring the second substrate (30), and the impedance with the impedance matching in the neighbouring acoustic attenuation region (40) of second contact surface (32B).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.