Percolative threshold dependence on the reduction of lateral dimension in random site networks is investigated by Monte Carlo simulations. Conductance of a large amount of random grain (nanocrystal) sets has been calculated as a function of the transverse dimension. Effect of a transverse applied field, acting on the grain charging energies, is evaluated and compared with the lateral reduction. Active devices (transistors) based on this concept could be fabricated and employed for multilevel device integration. (c) 2006 American Institute of Physics.
Lateral reduction of random percolative networks formed by nanocrystals: Possibilities for a new concept electronic device?
PENNELLI, GIOVANNI
2006-01-01
Abstract
Percolative threshold dependence on the reduction of lateral dimension in random site networks is investigated by Monte Carlo simulations. Conductance of a large amount of random grain (nanocrystal) sets has been calculated as a function of the transverse dimension. Effect of a transverse applied field, acting on the grain charging energies, is evaluated and compared with the lateral reduction. Active devices (transistors) based on this concept could be fabricated and employed for multilevel device integration. (c) 2006 American Institute of Physics.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
