Measurements performed on several graphene samples have shown the presence of a minimum of the flicker noise power spectral density near the charge neutrality point. This behavior is anomalous with respect to what is observed in more usual semi-conductors. Here, we report our explanation for this difference. We simulate the 1/f noise behavior of devices made of graphene and of more common semiconductors, through a model based on the validity of the mass-action law and on the conservation of the charge neutrality. We conclude that the minimum of the flicker noise at the charge neutrality point can be observed only in very clean samples of materials with similar mobilities for electrons and holes.
Model for 1/f Noise in Graphene and in More Common Semiconductors
Paolo-Marconcini
2020-01-01
Abstract
Measurements performed on several graphene samples have shown the presence of a minimum of the flicker noise power spectral density near the charge neutrality point. This behavior is anomalous with respect to what is observed in more usual semi-conductors. Here, we report our explanation for this difference. We simulate the 1/f noise behavior of devices made of graphene and of more common semiconductors, through a model based on the validity of the mass-action law and on the conservation of the charge neutrality. We conclude that the minimum of the flicker noise at the charge neutrality point can be observed only in very clean samples of materials with similar mobilities for electrons and holes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
