A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.
Semiconductor structure with partially embedded insulation region
Giuseppe Barillaro
2018-01-01
Abstract
A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.File in questo prodotto:
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