Using a combination of automated diffraction tomography and precession electron diffraction techniques, quasi-kinematical electron diffraction data sets were collected from intermetallic Ni 1+xTe 1embedded nanodomains and ion-thinned specimens of 6H-SiC semiconductor. Cell parameters and space groups were found automatically from the reconstructed 3D diffraction volume. The extracted intensities were used for fast ab initio structure determination by direct methods. © 2012 IOP Publishing Ltd.

Structure characterization of hard materials by precession electron diffraction and automatic diffraction tomography: 6H-SiC semiconductor and Ni1+xTe1 embedded nanodomains

MUGNAIOLI, E.;
2012-01-01

Abstract

Using a combination of automated diffraction tomography and precession electron diffraction techniques, quasi-kinematical electron diffraction data sets were collected from intermetallic Ni 1+xTe 1embedded nanodomains and ion-thinned specimens of 6H-SiC semiconductor. Cell parameters and space groups were found automatically from the reconstructed 3D diffraction volume. The extracted intensities were used for fast ab initio structure determination by direct methods. © 2012 IOP Publishing Ltd.
2012
Sarakinou, E.; Mugnaioli, E.; Lioutas, C. B.; Vouroutzis, N.; Frangis, N.; Kolb, U.; Nikolopoulos, S.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/1131366
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