Using a combination of automated diffraction tomography and precession electron diffraction techniques, quasi-kinematical electron diffraction data sets were collected from intermetallic Ni 1+xTe 1embedded nanodomains and ion-thinned specimens of 6H-SiC semiconductor. Cell parameters and space groups were found automatically from the reconstructed 3D diffraction volume. The extracted intensities were used for fast ab initio structure determination by direct methods. © 2012 IOP Publishing Ltd.
Structure characterization of hard materials by precession electron diffraction and automatic diffraction tomography: 6H-SiC semiconductor and Ni1+xTe1 embedded nanodomains
MUGNAIOLI, E.;
2012-01-01
Abstract
Using a combination of automated diffraction tomography and precession electron diffraction techniques, quasi-kinematical electron diffraction data sets were collected from intermetallic Ni 1+xTe 1embedded nanodomains and ion-thinned specimens of 6H-SiC semiconductor. Cell parameters and space groups were found automatically from the reconstructed 3D diffraction volume. The extracted intensities were used for fast ab initio structure determination by direct methods. © 2012 IOP Publishing Ltd.File in questo prodotto:
	
	
	
    
	
	
	
	
	
	
	
	
		
			
				
			
		
		
	
	
	
	
		
			Non ci sono file associati a questo prodotto.
		
		
	
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


