We propose a theoretical design for a magnetic memory cell, based on thin-film ferromagnetic nanorings, that can efficiently store, record, and read out information. An information bit is represented by the polarity of a stable 360 domain wall introduced into the ring. Switching between the two magnetization states is done by a current applied to a wire passing through the ring, whereby the 360 domain wall splits into two charged 180 degrees walls, which then move to the opposite extreme of the ring to recombine into a 360 wall of the opposite polarity.
Bit Storage by 360 degrees Domain Walls in Ferromagnetic Nanorings
Muratov, CB
;
2009-01-01
Abstract
We propose a theoretical design for a magnetic memory cell, based on thin-film ferromagnetic nanorings, that can efficiently store, record, and read out information. An information bit is represented by the polarity of a stable 360 domain wall introduced into the ring. Switching between the two magnetization states is done by a current applied to a wire passing through the ring, whereby the 360 domain wall splits into two charged 180 degrees walls, which then move to the opposite extreme of the ring to recombine into a 360 wall of the opposite polarity.File in questo prodotto:
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