Van der Waals semiconductor heterostructures can be designed to absorb mid-infrared radiation, however the lateral size of exfoliated flakes (few micrometers) is just at the diffraction limit. We assembled a confocal IR microscope fed by a quantum cascade laser and we show preliminary photocurrent results on InSe/MoS2 at low temperature.
Mid-infrared photocurrent microscopy of vertical van der Waals semiconductor heterostructures
Roddaro, S;Ortolani, M
2022-01-01
Abstract
Van der Waals semiconductor heterostructures can be designed to absorb mid-infrared radiation, however the lateral size of exfoliated flakes (few micrometers) is just at the diffraction limit. We assembled a confocal IR microscope fed by a quantum cascade laser and we show preliminary photocurrent results on InSe/MoS2 at low temperature.File in questo prodotto:
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