We report on the development of Silicon PhotoMultipliers (SiPM) at the Fondazione Bruno Kessler (FBK)-irst (Trento, Italy) in the framework of a collaboration with INFN. Device geometry and technology are resumed, and selected results from the characterization of SiPM prototypes from three production batches are reported, including static, dynamic, and noise properties, as well as photodetection efficiency.

Development of Silicon PhotoMultipliers at FBK-irst

DEL GUERRA, ALBERTO;
2007-01-01

Abstract

We report on the development of Silicon PhotoMultipliers (SiPM) at the Fondazione Bruno Kessler (FBK)-irst (Trento, Italy) in the framework of a collaboration with INFN. Device geometry and technology are resumed, and selected results from the characterization of SiPM prototypes from three production batches are reported, including static, dynamic, and noise properties, as well as photodetection efficiency.
2007
Piemonte, C; Battiston, R; Boscardin, M; Betta, Gfd; DEL GUERRA, Alberto; Llosa, G; Melchiorri, M; Pozza, A; Zorzi, N.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/116615
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