The results of the pre- and post-irradiation characterization of n- and p-type magnetic Czochralski silicon micro-strip sensors are reported. This work has been carried out within the INFN funded SMART project aimed at the development of radiation-hard semiconductor detectors for the luminosity upgrade of the large Hadron collider (LHC). The detectors have been fabricated at ITC-IRST (Trento, Italy) on 4 in wafers and the layout contains 10 mini-sensors. The devices have been irradiated with 24 GeV/c and 26 MeV protons in two different irradiation campaigns up to an equivalent fluence of 3.4 x 10(15) 1-MeV n/cm(2). The post-irradiation results show an improved radiation hardness of the magnetic Czochralski mini-sensors with respect to the reference float-zone sample. (c) 2006 Elsevier B.V. All rights reserved.
|Autori:||Macchiolo A; Borrello L; Boscardin M; Bruzzi M; Creanza D; Betta GFD; DePalma M; Focardi E; Manna N; Menichelli D; Messineo A; Piemonte C; Radicci V; Ronchin S; Scaringella M; Segneri G; Sentenac D; Zorzi N|
|Titolo:||Characterization of micro-strip detectors made with high resistivity n- and p-type Czochralski silicon|
|Anno del prodotto:||2007|
|Digital Object Identifier (DOI):||10.1016/j.nima.2006.10.244|
|Appare nelle tipologie:||1.1 Articolo in rivista|