Monolithic integration of detectors and transistors on high-resistivity silicon

We report on the most recent results from an R&D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed. (c) 2007 Elsevier B.V. All rights reserved.