The integration of 2D nanomaterials with silicon is expected to enrich the applications of 2D functional nanomaterials and pave the way for next-generation, nanoscale optoelectronics with enhanced performances. Herein, a strategy for rare earth element doping is utilized for the synthesis of 2D WS2:Er nanosheets to achieve up-conversion and down-conversion emissions ranging from visible to near-infrared regions. Moreover, the potential integration of the synthesized 2D nanosheets in silicon platforms is demonstrated by the realization of an infrared photodetector based on a WS2:Er/Si heterojunction. These devices operate at room temperature and show a high photoresponsivity of approximate to 39.8 mA W-1 (at 980 nm) and a detectivity of 2.79 x 10(10) cm Hz(1/2) W-1. Moreover, the dark current and noise power density are suppressed effectively by van der Waals-assisted p-n heterojunction. This work fundamentally contributes to establishing infrared detection by rare element doping of 2D materials in heterojunctions with Si, at the forefront of infrared 2DMs-based photonics.
Erbium-Doped WS2 with Down- and Up-Conversion Photoluminescence Integrated on Silicon for Heterojunction Infrared Photodetection
Camposeo, A;Pisignano, D;
2022-01-01
Abstract
The integration of 2D nanomaterials with silicon is expected to enrich the applications of 2D functional nanomaterials and pave the way for next-generation, nanoscale optoelectronics with enhanced performances. Herein, a strategy for rare earth element doping is utilized for the synthesis of 2D WS2:Er nanosheets to achieve up-conversion and down-conversion emissions ranging from visible to near-infrared regions. Moreover, the potential integration of the synthesized 2D nanosheets in silicon platforms is demonstrated by the realization of an infrared photodetector based on a WS2:Er/Si heterojunction. These devices operate at room temperature and show a high photoresponsivity of approximate to 39.8 mA W-1 (at 980 nm) and a detectivity of 2.79 x 10(10) cm Hz(1/2) W-1. Moreover, the dark current and noise power density are suppressed effectively by van der Waals-assisted p-n heterojunction. This work fundamentally contributes to establishing infrared detection by rare element doping of 2D materials in heterojunctions with Si, at the forefront of infrared 2DMs-based photonics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
