10 Gb/s Line Driver in 65 nm CMOS Technology for Radiation Environments

High-energy physics experiments require links able to sustain high-speed data transfer while exposed to radiation phenomena. This paper outlines the design of a radiation-hard line driver for communication up to 10 Gb/s allowing designers to satisfy this need. The driver design relies on radiation hard by design techniques adopted to increase its radiation hardness. In addition, broad banding solutions are employed to sustain high-speed communications. Simulations show the driver's ability to operate up to 10 Gb/s when exposed to 1 Grad total ionization dose. Furthermore, it is demonstrated that the proposed driver is robust to single-event effects.