High resolution electron and ion beam lithographies, fundamental tools for nanofabrication and nanotechnologies, require fast and high precision (high bit number) pattern generators. In the present work a solution for increasing the bit number, and preserving the speed of the system, is presented. A prototype with effective 18 bit resolution and with a write speed as fast as 10 MHz has been successfully tested: details of the adopted hardware solution are presented and described. This solution is very general and can be used in all those applications that require the generation of control voltages with an high bit number (high precision) at high speed, such as, for example, the scanning probe microscopy and nanomanipulation. Software solutions for increasing the data transfer efficiency are also presented; the aim of the adopted solutions is to preserve the flexibility and adaptability of the pattern generator to different writing strategies. (C) 2008 American Institute of Physics.
|Titolo:||Fast, high bit number pattern generator for electron and ion beam lithographies|
|Anno del prodotto:||2008|
|Digital Object Identifier (DOI):||10.1063/1.2894213|
|Appare nelle tipologie:||1.1 Articolo in rivista|