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EnglishThe electronic band structure of the InAs-GaSb superlattice is studied within the localized-orbital framework by the renormalization method. The tight-binding Hamiltonian includes spin-orbit coupling and an accurate description of the composing crystals near relevant band edges. The tight-binding renormalization-group method is described in detail, and is shown to be conceptually simple and operatively efficient. The superlattice band structure is calculated for several unit-cell widths, and the semiconductor-semimetal transition is analyzed. A negative indirect band gap appears for long-period superlattices; its origin and the effects of band anisotropy and spin-orbit splitting are discussed.
| Autori interni: | |
| Autori: | GROSSO G; MORONI S; PASTORI PARRAVICINI G |
| Titolo: | ELECTRONIC-STRUCTURE OF THE INAS-GASB SUPERLATTICE STUDIED BY THE RENORMALIZATION METHOD |
| Anno del prodotto: | 1989 |
| Digital Object Identifier (DOI): | 10.1103/PhysRevB.40.12328 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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