Evaluating capacitance modulation in conformable few-layer MoS2/organic metal–insulator–semiconductor structures

The growing field of conformable and bio-integrated electronics is enabling the development of innovative applications such as wearable sensors, electronic skin, and implantable devices. This evolution requires advanced materials and fabrication strategies capable of delivering electrical functionality without compromising mechanical compliance. In particular, understanding the electrical behavior of the metal–insulator–semiconductor (MIS) structure is fundamental, as it forms the gate stack in conformable transistors. Therefore, a detailed MIS electrical assessment is essential for the design and integration of reliable, flexible field-effect platforms and wearable electronic systems. Here, we present conformable MIS capacitors based on few-layer MoS 2, inkjet-printed pedot:pss electrodes, and ultrathin bilayer poly(vinyl formal) (PVF) dielectrics on polyimide substrates, and we report their electrical behavior through capacitance–voltage (C–V) profiling and equivalent circuit modeling. To our knowledge, this is the first characterization of such a hybrid MIS structure by C–V measurements, providing direct insight into the dielectric and semiconductor contributions and validating the suitability of this technology for conformable electronics. Our results show a stable and reproducible capacitance modulation of about one order of magnitude under bias voltage changes at low frequencies (∼ 100 Hz), with reliable operation for frequencies up 10 kHz, and robust performance within the investigated bending-induced strain range.