We report our work on the characterization by electrically detected magnetic resonance (EDMR) measurements of silicon nanowires (SiNWs) produced by different top-down processes. SiNWs were fabricated starting from SOI wafers using standard e-beam lithography and anisotropic wet etching or by metal-assisted chemical etching. Further oxidation was used to reduce the wire cross section. Different EDMR implementations were used to address the electronic wave function of donors (P) and to characterize point defects at the SiNWs/SiO(2) interface. The EDMR spectra of as produced SiNWs with high donor concentration ([P]= 10(18) cm(-3)) show a single line related to delocalized electrons. SiNWs produced on substrates with lower donor concentration ([P] < 10(16) cm(-3)) reveal the doublet related to substitutional P in Si, as well as lines related to interfacial defects such as Pb(0), Pb, E', and E'-like. The EDMR spectra of samples produced by metal-assisted chemical etching exposed to post production oxidation reveal a disordered and defective interface and the disappearance of the P related signal. Forming gas annealing, on the other hand, reduces the contribution of interfacial defects and allows a better resolution of the P related doublet.

Electrically Detected Magnetic Resonance of Donors and Interfacial Defects in Silicon Nanowires

PENNELLI, GIOVANNI;
2011

Abstract

We report our work on the characterization by electrically detected magnetic resonance (EDMR) measurements of silicon nanowires (SiNWs) produced by different top-down processes. SiNWs were fabricated starting from SOI wafers using standard e-beam lithography and anisotropic wet etching or by metal-assisted chemical etching. Further oxidation was used to reduce the wire cross section. Different EDMR implementations were used to address the electronic wave function of donors (P) and to characterize point defects at the SiNWs/SiO(2) interface. The EDMR spectra of as produced SiNWs with high donor concentration ([P]= 10(18) cm(-3)) show a single line related to delocalized electrons. SiNWs produced on substrates with lower donor concentration ([P] < 10(16) cm(-3)) reveal the doublet related to substitutional P in Si, as well as lines related to interfacial defects such as Pb(0), Pb, E', and E'-like. The EDMR spectra of samples produced by metal-assisted chemical etching exposed to post production oxidation reveal a disordered and defective interface and the disappearance of the P related signal. Forming gas annealing, on the other hand, reduces the contribution of interfacial defects and allows a better resolution of the P related doublet.
Fanciulli, M; Vellei, A; Canevali, C; Baldovino, S; Pennelli, Giovanni; Longo, M.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11568/145195
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