We discuss the renormalization-group formalism for calculating the electronic structure of surfaces. To illustrate operatively the features of the method, we consider the ideal and reconstructed Si (100)-(2 × 1) surface, because of the interest of this prototype cleavage face from an experimental and theoretical point of view. The renormalization-group method is shown to be computationally efficient and conceptually simple; it provides a convenient description of the electronic structure of surfaces, as well as other multilayer systems.
Autori interni: | |
Autori: | GROSSO G; MORONI S; PASTORI PARRAVICINI G |
Titolo: | RENORMALIZATION-GROUP STUDY OF THE ELECTRONIC-STRUCTURE OF SURFACES - APPLICATION TO IDEAL AND RECONSTRUCTED SILICON (100)-(2 X 1) SURFACE |
Anno del prodotto: | 1988 |
Digital Object Identifier (DOI): | 10.1088/0031-8949/37/6/018 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.