We discuss the renormalization-group formalism for calculating the electronic structure of surfaces. To illustrate operatively the features of the method, we consider the ideal and reconstructed Si (100)-(2 × 1) surface, because of the interest of this prototype cleavage face from an experimental and theoretical point of view. The renormalization-group method is shown to be computationally efficient and conceptually simple; it provides a convenient description of the electronic structure of surfaces, as well as other multilayer systems.

RENORMALIZATION-GROUP STUDY OF THE ELECTRONIC-STRUCTURE OF SURFACES - APPLICATION TO IDEAL AND RECONSTRUCTED SILICON (100)-(2 X 1) SURFACE

GROSSO, GIUSEPPE;
1988-01-01

Abstract

We discuss the renormalization-group formalism for calculating the electronic structure of surfaces. To illustrate operatively the features of the method, we consider the ideal and reconstructed Si (100)-(2 × 1) surface, because of the interest of this prototype cleavage face from an experimental and theoretical point of view. The renormalization-group method is shown to be computationally efficient and conceptually simple; it provides a convenient description of the electronic structure of surfaces, as well as other multilayer systems.
1988
Grosso, Giuseppe; Moroni, S; PASTORI PARRAVICINI, G.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11568/16011
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