This paper describes the expected performance for the single-sided silicon detectors of the barrel tracker of CMS. We present results obtained on;P-side test structures for different detector design geometries (strip pitch and width) and two readout schemes (every strip or every second strip). We show measurements on devices irradiated by fast neutrons, operated at very high bias voltage well above the depletion. We use an analytical model to evaluate the charge collection efficiency, noise, and signal-to-noise ratio in realistic experimental conditions.
|Autori:||Bozzi C; Bondi U; Dell'Orso R; Messineo A; Rosi G; Tonelli G; Verdini PG; Wheadon R; Zhen X|
|Titolo:||Characterization and simulation of CMS-type silicon microstrip detectors|
|Anno del prodotto:||1999|
|Appare nelle tipologie:||1.1 Articolo in rivista|